Power Integrations (NASDAQ: POWI), a leading provider of high-voltage integrated circuits for energy-efficient power conversion, has introduced the 1700 V GaN InnoMux-2 IC, the latest addition to its InnoMux™-2 family. This new GaN-based switcher IC sets a new benchmark in gallium nitride (GaN) technology, delivering better than 90% efficiency from a 1000 VDC bus and supporting up to 70 W of power output across three independently regulated channels. Designed for demanding applications, the 1700 V rating enables Power Integrations to replace traditional silicon carbide (SiC) transistors in power supply applications, offering a more efficient and cost-effective solution.
The 1700 V GaN switch in the InnoMux-2 IC represents an industry first and builds on Power Integrations’ advancements in high-voltage GaN devices, following the launch of their 900 V and 1250 V devices in 2023. By incorporating proprietary PowiGaN™ technology, the InnoMux-2 IC achieves high performance and sets a new standard for power management in applications that require reliability and high efficiency. The device efficiently supports applications such as automotive chargers, solar inverters, three-phase meters, and various industrial power systems where energy efficiency and reliable output regulation are critical.
InnoMux-2’s capabilities go beyond high voltage. The device supports multiple outputs with exceptional accuracy, regulating each output within a one-percent margin, thereby eliminating the need for additional post regulators. This capability not only simplifies power supply design but also contributes to an approximately 10% improvement in overall system efficiency. Operating in a single-stage configuration, the InnoMux-2 IC delivers significant power savings and optimized performance for end applications, making it highly suitable for use in renewable energy systems, electric vehicle infrastructure, and smart industrial devices.
Radu Barsan, Vice President of Technology at Power Integrations, emphasized the company’s rapid innovation in GaN technology. “Our rapid pace of GaN development has delivered three world-first voltage ratings in a span of less than two years: 900 V, 1250 V, and now 1700 V,” Barsan said. He highlighted the InnoMux-2 IC’s integration of several cutting-edge technologies, including independent, multi-output regulation, FluxLink™ digital isolation for secondary-side regulation (SSR), and zero voltage switching (ZVS) without an active clamp. These innovations collectively reduce switching losses and enhance efficiency, especially in power-sensitive applications.
The release of this new IC is timely as the GaN power device market is experiencing rapid growth. According to Ezgi Dogmus, compound semiconductor expert and activity manager at Yole Group, the market for GaN devices is set to reach $2 billion by the end of the decade, with expanding opportunities across sectors like automotive, renewable energy, and consumer electronics. GaN technology, with its higher efficiency and performance potential, provides cost advantages over traditional SiC solutions, and Power Integrations’ 1700 V rating raises the bar for what GaN devices can achieve in commercial settings.
Power Integrations has made the 1700 V GaN InnoMux-2 IC available at competitive pricing, starting at $4.90 for orders of 10,000 units. To support developers, Power Integrations also offers a reference design, RDR-1053, which details a 60 W dual-output (5 V and 24 V) power supply, available for free download on the company’s website. Samples, evaluation boards, and further technical assistance are accessible through Power Integrations’ authorized distributors, including DigiKey, Newark, Mouser, and RS Components.
This innovation marks a significant milestone in the advancement of GaN technology, positioning Power Integrations as a leader in high-voltage, high-efficiency power solutions. As industries continue to shift towards greener and more cost-effective power management solutions, the 1700 V GaN InnoMux-2 IC offers a powerful option for manufacturers seeking next-generation performance and efficiency.
